Ternary Logic Implemented on a Single Dopant Atom Field Effect Silicon Transistor M. Klein, J.A. Mol, J. Verduijn, G. P. Lansbergen, S. Rogge, R. D. Levine and F. Remacle We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a Fin Field Effect Transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row.  |
